rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13112 6 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks , and registered trademarks are the property of their respective owners. ?2013, rf micro devices, inc. 1 of 3 D10040180GT gaas power doubler hybrid 40 mhz to 1 000 mhz the D10040180GT is a hybrid power doubler amplifier module. the part employs gaas die and is operated from 40mhz to 1000mhz. it provides excellent linearity and superior return loss performance with low noise and optimal reliability. package: sot - 115j features excellent linearity superior r eturn loss performance extremely low distortion optimal reliability low noise unconditionally stable under all terminations 19.0db min. gain at 1ghz 375ma max. at 24 vdc applications 40mhz to 1000mhz cat v amplifier systems ordering information D10040180GT box with 5 0 pieces absolute maximum rat ings parameter rating unit rf input voltage (single tone) 75 dbmv dc supply over - voltage (5 minutes) 30 v storage temperature - 40 to +100 c operating mounting base temperature - 30 to +100 c caution! esd sensitive device. rohs (restriction of hazardous substances): compliant per eu directive 2011/65/eu. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. D10040180GT i n p u t o u t p u t v +
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13112 6 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3 D10040180GT nominal operating parameters parameter specification unit condition min typ max general performance v + = 24v; t mb = 30c; z s = z l = 75 power gain 18.0 18.5 19.0 db f = 50mhz 19.0 20.0 20.5 db f = 1000mhz slope [1] 0.5 1.5 2.0 db f = 40mhz to 1000mhz flatness of frequency response 0.8 db f = 40mhz to 1000mhz (peak to valley) input return loss 20.0 db f = 40mhz to 320mhz 19.0 db f = 320mhz to 640mhz 17.0 db f = 640mhz to 870mhz 16.0 db f = 870mhz to 1000mhz output return loss 20.0 db f = 40mhz to 320mhz 19.0 db f = 320mhz to 640mhz 18.0 db f = 640mhz to 870mhz 17.0 db f = 870mhz to 1000mhz noise figure 5.5 6.5 db f = 50mhz to 1000mhz total current consumption (dc) 360.0 375. 0 ma distortion data 40mhz to 870mhz v + = 24v; t mb = 30c; z s = z l = 75 ctb - 64 - 62 dbc 132 ch flat; v o = 44dbmv [2] xmod - 60 - 58 dbc cso - 65 - 63 dbc 1. the slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 132 channels, ntsc frequency raster: 55.25mhz to 865.25mhz, +44dbmv flat output level. composite second order (cso) - the cso parameter (both sum and difference products) is defined by the ncta. composite triple beat (ctb) - the ctb parameter is defined by the ncta. cross modulation (xmod) - cross modulation (xmod) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13112 6 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 3 D10040180GT package drawing (dimensions in millimeters) 1 2 3 5 7 8 9 r o q m 5 10mm 0 scale b n l f a d h ? g t s p j u i e c k european projection n o m i n a l m i n m a x a 4 4 , 6 0 , 2 4 4 , 4 4 4 , 8 b 1 3 , 6 0 , 2 4 4 , 4 1 3 , 8 c 2 0 , 4 0 , 5 1 9 , 9 2 0 , 9 d 8 0 , 1 5 7 , 8 5 8 , 1 5 e 1 2 , 6 0 , 1 5 1 2 , 4 5 1 2 , 7 5 f 3 8 , 1 0 , 2 3 7 , 9 3 8 , 3 g 4 + 0 , 2 / - 0 , 0 5 3 , 9 5 4 , 2 h 4 0 , 2 3 , 8 4 , 2 i 2 5 , 4 0 , 2 2 5 , 2 2 5 , 6 j u n c 6 - 3 2 - - k 4 , 2 0 , 2 4 , 0 4 , 4 l 2 7 , 2 0 , 2 2 7 , 0 2 7 , 4 m 1 1 , 6 0 , 5 1 1 , 1 1 2 , 1 n 5 , 8 0 , 4 5 , 4 6 , 2 o 0 , 2 5 0 , 0 2 0 , 2 3 0 , 2 7 p 0 , 4 5 0 , 0 3 0 , 4 2 0 , 4 8 q 2 , 5 4 0 , 3 2 , 2 4 2 , 8 4 r 2 , 5 4 0 , 5 2 , 0 4 3 , 0 4 s 2 , 5 4 0 , 2 5 2 , 2 9 2 , 7 9 t 5 , 0 8 0 , 2 5 4 , 8 3 5 , 3 3 u 5 , 0 8 0 , 2 5 4 , 8 3 5 , 3 3 p i n n a m e 1 i n p u t 2 - 3 g n d 4 5 + v b 6 7 - 8 g n d 9 o u t p u t pinning: notes:
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